型号:

NTR1P02T1

RoHS:
制造商:ON Semiconductor描述:MOSFET P-CH 20V 1A SOT-23
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTR1P02T1 PDF
产品变化通告 Product Discontinuation 20/Aug/2008
Wire Change for SOT23 Pkg 26/May/2009
产品目录绘图 MOSFET SOT-23-3 Pkg
标准包装 3,000
系列 -
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 1A
开态Rds(最大)@ Id, Vgs @ 25° C 180 毫欧 @ 1.5A,10V
Id 时的 Vgs(th)(最大) 2.3V @ 250µA
闸电荷(Qg) @ Vgs 2.5nC @ 5V
输入电容 (Ciss) @ Vds 165pF @ 5V
功率 - 最大 400mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
包装 带卷 (TR)
其它名称 NTR1P02T1OS
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